Инд. авторы:	Surovtsev N.V., Kupriyanov I.N.
Заглавие:	Temperature dependence of the Raman line width in diamond: Revisited
Библ. ссылка:	Surovtsev N.V., Kupriyanov I.N. Temperature dependence of the Raman line width in diamond: Revisited // Journal of Raman Spectroscopy. - 2015. - Vol.46. - Iss. 1. - P.171-176. - ISSN 0377-0486. - EISSN 1097-4555.
Внешние системы:	DOI: 10.1002/jrs.4604; SCOPUS: 2-s2.0-84921637388; WoS: 000348501500025;
Реферат:	eng: Despite more than 60-year history of Raman scattering studies of diamond, considerable discrepancies between values of the Raman linewidth and its temperature dependence reported by different authors still exist. In this paper we report on the Raman scattering measurements performed for synthetic diamond crystals with nitrogen impurity content below 1ppm (type IIa) and dislocation density 10(2)-10(3)cm(-2) over the temperature range of 50-1000K. The spectra were recorded with a high spectral resolution (similar to 0.3cm(-1)) and thoroughly analyzed to account for the instrumental response. The results demonstrate unequivocally that the temperature dependence of the Raman line width is well described by a model which assumes both three-phonon and four-phonon anharmonic processes. Elimination of the discrepancies in the line width description advances the Raman scattering technique in the characterization of diamonds with different crystalline quality, defect and/or impurity concentration. Copyright (c) 2015 John Wiley & Sons, Ltd.
Ключевые слова:	diamond; zone-center optical phonon; linewidth; phonon decay; OPTICAL PHONONS; NITROGEN IMPURITY; SCATTERING; CRYSTALS; SPECTRUM; SEMICONDUCTORS; SILICON; DYNAMICS; LINEWIDTH; SPECTROSCOPY; anharmonicity;
Издано:	2015
Физ. характеристика:	с.171-176