Инд. авторы:	Grigoryev Y.N., Gorobchuk A.G.
Заглавие:	Modeling of plasma-chemical etching technology in CF 4/H 2 mixture
Библ. ссылка:	Grigoryev Y.N., Gorobchuk A.G. Modeling of plasma-chemical etching technology in CF 4/H 2 mixture // Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС). - 2015. - Iss. 2. - P.134-140. - ISSN 2078-7707.
Внешние системы:	РИНЦ: 24503934;
Ключевые слова:	Plasma-chemical etching; plasma-chemical reactors; Multicomponent gas mixtures; mathematical modeling;
Издано:	2015
Физ. характеристика:	с.134-140
Цитирование:	1. Grigoryev Yu.N., Gorobchuk A.G. Numerical Simulation of Plasma-Chemical Processing Semiconductors, Micro Electronic and Mechanical Systems, Kenichi Takahata (Ed.), In-Tech, 2009, pp. 185-210. 2. Grigor'ev Yu.N., Gorobchuk A.G. Mikroelektronika, 2013, vol. 42, no 6, pp. 454-462 (in Russian). 3. Venkatesan S.P., Trachtenberg I., Edgar T.F. Modeling of silicon etching in CF4/O2 and CF4/H2 plasmas, Journal of the electrochemical society, 1990, vol. 137, no. 7, pp. 2280-2290. 4. Grigor'ev Yu.N., Gorobchuk A.G. Mikroelektronika, 1998, vol. 27, no. 4. pp. 294-303 (in Russian). 5. Grigor'ev Yu.N., Gorobchuk A.G. Mikroelektronika, 2007, vol. 36, no. 5. pp. 368-379 (in Russian).