Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2

Grigoryev Y.N.; Gorobchuk A.G.

doi:10.1134/S1027451015010309

Инд. авторы:	Grigoryev Y.N., Gorobchuk A.G.
Заглавие:	Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2
Библ. ссылка:	Grigoryev Y.N., Gorobchuk A.G. Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2 // Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques. - 2015. - Vol.9. - Iss. 1. - P.184-189. - ISSN 1027-4510. - EISSN 1819-7094.
Внешние системы:	DOI: 10.1134/S1027451015010309; РИНЦ: 23970695; SCOPUS: 2-s2.0-84922323644; WoS: 000213943500028;
Реферат:	eng: The hydrodynamic approach is used to simulate silicon passivation by unsaturated CF_x radicals under plasma-chemical etching in CF₄/H₂. The plasma-chemical kinetics model contains 28 determinative gas-phase reactions with the participation of F, F₂, CF₂, CF₃, CF₄, C₂F₆, H, H₂, HF, CHF₃, and CH₂F₂. The extended kinetics of heterogeneous reactions on a silicon surface comprises the competing processes of the adsorption of CF₂ and CF₃ radicals. It is demonstrated that a major portion of atomic fluorine is actively involved in the formation of hydrogen fluoride, reducing the silicon etching rate to a significant extent. It is established that CF₂ adsorption is predominant among the competing processes of the passivation of a silicon surface and that the CF₂ layer covers the entire silicon surface at a 40% H₂ content, thereby causing its etching to cease.
Ключевые слова:	radical adsorption; Plasma-chemical etching; Multicomponent gas mixtures;
Издано:	2015
Физ. характеристика:	с.184-189
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