Инд. авторы:	Gritsenko V.A., Novikov Y.N., Shaposhnikov A.V., Morokov Y.N.
Заглавие:	Numerical simulation of intrinsic defects in SiO2 and Si3N4
Библ. ссылка:	Gritsenko V.A., Novikov Y.N., Shaposhnikov A.V., Morokov Y.N. Numerical simulation of intrinsic defects in SiO2 and Si3N4 // Semiconductors. - 2001. - Vol.35. - Iss. 9. - P.997-1005. - ISSN 1063-7826. - EISSN 1090-6479.
Внешние системы:	DOI: 10.1134/1.1403563; РИНЦ: 13368993; WoS: 000170801300005;
Реферат:	eng: The electronic structure of major intrinsic defects in SiO2 and Si3N4 was calculated by the MINDO/3 and the density-functional methods. The defects that are of interest from the standpoint of their ability to capture electrons or holes were considered; these centers include the three- and two-coordinated silicon atoms, the one-coordinated oxygen atom, and the two-coordinated nitrogen atom. The gain in energy as a result of capturing an electron or a hole with allowance made for electronic and atomic relaxation was determined for these defects. The experimental X-ray spectra for both materials are compared with calculated spectra. (C) 2001 MAIK "Nauka/Interperiodica".
Издано:	2001
Физ. характеристика:	с.997-1005