Инд. авторы:	Gritsenko V.A., Svitasheva S.N., Petrenko I.P., Novikov Yu.N., Morokov Yu.N., Wong H., Kwok R.W.M., Chan R.W.M.
Заглавие:	Characterization of the silicon nitride-thermal oxide interface in oxide-nitride-oxide structures by ELS, XPS, ellipsometry, and numerical simulation
Библ. ссылка:	Gritsenko V.A., Svitasheva S.N., Petrenko I.P., Novikov Yu.N., Morokov Yu.N., Wong H., Kwok R.W.M., Chan R.W.M. Characterization of the silicon nitride-thermal oxide interface in oxide-nitride-oxide structures by ELS, XPS, ellipsometry, and numerical simulation // Microelectronics Reliability. - 1998. - Vol.38. - Iss. 5. - P.745-751. - ISSN 0026-2714.
Внешние системы:	DOI: 10.1016/S0026-2714(98)00019-5; РИНЦ: 13278429; WoS: 000074874400003;
Реферат:	eng: This work studies the properties of the SiO2-Si3N4 interface in oxide-nitride-oxide (ONO) structures by using energy loss spectroscopy, X-ray photoelectron spectroscopy, ellipsometry measurements and numerical simulation. By oxidation the as-deposited Si3N4, silicon-silicon bonds at Si3N4-thermal SiO2 interface are found. These excess Si-Si bonds are produced by replacing nitrogen with oxygen during the oxidation of Si3N4. We further propose that the Si-Si bonds are the major trap center at the Si3N4-SiO2 interface. With MINDO/3 numerical simulation, we have found that the Si-Si bonds can capture both electrons and holes at the top Si3N4-SiO2 interface. These bonds are proposed to be the responsible candidate for the positive charge accumulation in re-oxidized nitrided oxide. (C) 1998 Elsevier Science Ltd. All rights reserved.
Издано:	1998
Физ. характеристика:	с.745-751