Инд. авторы:	Gritsenko V.A., Novikov Yu.N., Morokov Yu.N., Wong H.
Заглавие:	Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure
Библ. ссылка:	Gritsenko V.A., Novikov Yu.N., Morokov Yu.N., Wong H. Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure // Microelectronics Reliability. - 1998. - Vol.38. - P.1457-1464. - ISSN 0026-2714.
Внешние системы:	DOI: 10.1016/S0026-2714(98)00047-X; РИНЦ: 13285291; SCOPUS: S002627149800047X; WoS: 000077017500012;
Реферат:	eng: Numerical simulation using MINDO/3 was performed to study the electronic structure of Si-Si bond traps in the silicon oxide/nitride/oxide structure. Results show that the neutral diamagnetic Si-Si bond in Si3N4 can capture both electrons and holes. Simulation results also suggest that the creation of charged diamagnetic defect pairs is unfavorable in Si3N4 Electron and hole trapping models are also proposed for the Si-Si bond. (C) 1998 Elsevier Science Ltd. All rights reserved.
Издано:	1998
Физ. характеристика:	с.1457-1464