Инд. авторы:	Gritsenko V.A., Meerson E.E., Morokov Yu.N.
Заглавие:	Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures
Библ. ссылка:	Gritsenko V.A., Meerson E.E., Morokov Yu.N. Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures // Physical Review B: Condensed Matter and Materials Physics. - 1998. - Vol.57. - Iss. 4. - P.R2081-R2083. - ISSN 1098-0121. - EISSN 1550-235X.
Внешние системы:	DOI: 10.1103/PhysRevB.57.R2081; РИНЦ: 13291832; WoS: 000071834900021;
Реферат:	eng: Thermally assisted tunneling of holes at the Au-Si3N4 interface was experimentally observed. The hole barrier of 1.6+/-0.2 eV and the effective masses for the hole and electron tunneling into silicon nitride have been determined. A revised energy-band diagram of the metal-nitride-oxide-semiconductor structure is constructed.
Издано:	1998