| Инд. авторы: | Gadiyak G.V. |
| Заглавие: | Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects |
| Библ. ссылка: | Gadiyak G.V. Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects // 6-th Internationsl Conference on Device and Technologies Simulation, 14-16 October, 1998, Cape Town, South Africa, 1998. |
| Издано: | 1998 |