Инд. авторы: Gadiyak G.V.
Заглавие: Development of Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide
Библ. ссылка: Gadiyak G.V. Development of Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide // 6-th Internationsl Conference on Device and Technologies Simulation, 14-16 October, 1998, Cape Town, South Africa, 1998.
Издано: 1998