| Инд. авторы: | Gadiyak G.V. |
| Заглавие: | Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide. Power Semiconductor Materials and Devices, Ed. S.J.Pearton, R.J.Shul |
| Библ. ссылка: | Gadiyak G.V. Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide. Power Semiconductor Materials and Devices, Ed. S.J.Pearton, R.J.Shul // MRS. - 1997. - Vol.483. - P.223-227. |
| Издано: | 1997 |
| Физ. характеристика: | с.223-227 |