Инд. авторы: Gadiyak G.V.
Заглавие: Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide
Библ. ссылка: Gadiyak G.V. Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide // V International Conference on VLSI and CAD, 13-15 October, 1997, Seoul, Korea. - 1997.
Издано: 1997