Инд. авторы: Gadiyak G.V.
Заглавие: Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects
Библ. ссылка: Gadiyak G.V. Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects // Material Research Society MRS Meeting, 1-7 December, 1997, Boston, USA. - 1997.
Издано: 1997