Инд. авторы: | Gadiyak G.V. |
Заглавие: | Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects |
Библ. ссылка: | Gadiyak G.V. Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects // Material Research Society MRS Meeting, 1-7 December, 1997, Boston, USA. - 1997. |
Издано: | 1997 |