| Инд. авторы: | Gadiyak G.V. |
| Заглавие: | Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects |
| Библ. ссылка: | Gadiyak G.V. Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects // International Conference on Advanced Materials, 16-20 June, 1997, Strasbourg, France, 1997. |
| Издано: | 1997 |