Инд. авторы:	Gadiyak G.V.
Заглавие:	Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects
Библ. ссылка:	Gadiyak G.V. Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO3 Interface Defects // V International Conference on VLSI and CAD, 13-15 October, 1997, Seoul, Korea, 1997.
Издано:	1997