Инд. авторы:	Gritsenko V.A., Morokov Yu.N., Novikov Yu.N., Cheng Y.C., Wong H.
Заглавие:	Electronic Structure of Si-Si bond in Si3N4 and SiO2: Experiment and Simulation by MINDO/3
Библ. ссылка:	Gritsenko V.A., Morokov Yu.N., Novikov Yu.N., Cheng Y.C., Wong H. Electronic Structure of Si-Si bond in Si3N4 and SiO2: Experiment and Simulation by MINDO/3 // Amorphous and Crystalline Thin Films. EInternational Symposium, December, 1996, Boston, USA, 1996.
Издано:	1996