Инд. авторы: | Gritsenko V.A., Ivanov R.M., Morokov Yu.N. |
Заглавие: | Simulation of Hole and Electron Traps in Silicon Dioxide by MINDO/3 |
Библ. ссылка: | Gritsenko V.A., Ivanov R.M., Morokov Yu.N. Simulation of Hole and Electron Traps in Silicon Dioxide by MINDO/3 // The Forth Intern. Seminar on Simulation of Devices and Tech. Programme and Proc. November 15-17, 1995. Bergen Dal Kruger National Park. South Africa, 1995. - P.78-81. |
Издано: | South Africa: , 1995 |
Физ. характеристика: | с.78-81 |