Инд. авторы: Gritsenko V.A., Ivanov R.M., Morokov Yu.N.
Заглавие: Simulation of Hole and Electron Traps in Silicon Dioxide by MINDO/3
Библ. ссылка: Gritsenko V.A., Ivanov R.M., Morokov Yu.N. Simulation of Hole and Electron Traps in Silicon Dioxide by MINDO/3 // The Forth Intern. Seminar on Simulation of Devices and Tech. Programme and Proc. November 15-17, 1995. Bergen Dal Kruger National Park. South Africa, 1995. - P.78-81.
Издано: South Africa: , 1995
Физ. характеристика: с.78-81