Инд. авторы:	Gadiyak G.V.
Заглавие:	Model of Transport of Atomic and Molecular Hydrogen and Defect Generation in Metal Oxide Semiconductor Capacitors and its Role in Charge Accumulation and Device Degradation
Библ. ссылка:	Gadiyak G.V. Model of Transport of Atomic and Molecular Hydrogen and Defect Generation in Metal Oxide Semiconductor Capacitors and its Role in Charge Accumulation and Device Degradation // The Forth Intern. Seminar on Simulation of Devices and Tech. Programme and Proc. November 15-17, 1995. Bergen Dal Kruger National Park. South Africa, 1995. - P.128-137.
Издано:	South Africa: , 1995
Физ. характеристика:	с.128-137