Инд. авторы: Gadiyak G.V., Blaginin D.I.
Заглавие: The Development of Radiation Enhanced Diffusion Model of Boron in Silicon
Библ. ссылка: Gadiyak G.V., Blaginin D.I. The Development of Radiation Enhanced Diffusion Model of Boron in Silicon // International Journal for Computation and Mathematics in Electrical and Electronic Engineering. - 1993. - Т.12. - № 4. - ISSN 0332-1649.
Издано: 1993