Инд. авторы:	Gadiyak G.V., Korobitsina J.L., Kramarenko V.V.
Заглавие:	Numerical Simulation of the Thermal Oxidation of Silicon
Библ. ссылка:	Gadiyak G.V., Korobitsina J.L., Kramarenko V.V. Numerical Simulation of the Thermal Oxidation of Silicon // International Journal for Computation and Mathematics in Electrical and Electronic Engineering. - 1992. - Vol.11. - Iss. 4. - P.419-432. - ISSN 0332-1649.
Внешние системы:	WoS: A1992KL62100005;
Реферат:	eng: Computer code complex for the thermal oxidation of silicon is presented. There are one-dimensional model and two- dimensional models:the model of viscoelastic oxide and the hydrodynamical models - an ideal fluid and a viscous fluid models. If nitride mask is absent, a one-dimensional model is used. The influence of an induced stress on the diffusion and reaction is taken into account.
Издано:	1992
Физ. характеристика:	с.419-432